ALD preparation of high-k HfO2 thin films with enhanced energy density and efficient electrostatic energy storage
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| Authors: | Zhang, L; Liu, M; Ren, W; Zhou, ZY; Dong, GH; Zhang, YJ; Peng, B; Hao, XH; Wang, CY; Jiang, ZD; Jing, WX; Ye, ZG |
| Year: | 2017 |
| Journal: | RSC Adv. 7: 8388-8393 Article Link (DOI) |
| Title: | ALD preparation of high-k HfO2 thin films with enhanced energy density and efficient electrostatic energy storage |
| Abstract: | High-k dielectric HfO2 thin films with a predominant monoclinic phase were prepared by atomic layer deposition (ALD). The annealed HfO2 films exhibited a large dielectric constant, of up to epsilon(r) = 26 with a high breakdown field of over 4000 kV cm(-1). The best performance with a maximum recoverable energy density of 21.3 J cm(-3) and energy efficiency of 75% was obtained with the 63 nm HfO2 films. In addition, a well-defined temperature dependence of the energy storage properties from room temperature to 150 degrees C was demonstrated, indicating a stable energy density variation between 11.0 and 13.0 J cm(-3) with a high energy efficiency of about 80%. These achievements provide a platform for synthesizing high-k dielectric thin films with enhanced energy densities and efficiencies. |
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