Probing the electrical transport properties of intrinsic InN nanowires
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| Authors: | Zhao, S; Salehzadeh, O; Alagha, S; Kavanagh, KL; Watkins, SP; Mi, Z |
| Year: | 2013 |
| Journal: | Applied Physics Letters 102 Article Link (DOI) |
| Title: | Probing the electrical transport properties of intrinsic InN nanowires |
| Abstract: | We have studied the electrical transport properties of intrinsic InN nanowires using an electrical nanoprobing technique in a scanning electron microscope environment. It is found that such intrinsic InN nanowires exhibit an ohmic conduction at low bias and a space charge limited conduction at high bias. It is further derived that such InN nanowires can exhibit a free carrier concentration as low as similar to 10(13) cm(-3) and possess a very large electron mobility in the range of 8000-12 000 cm(2)/V s, approaching the theoretically predicted maximum electron mobility at room temperature. In addition, charge traps are found to distribute exponentially just below the conduction band edge, with a characteristic energy similar to 65 meV. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792699] |
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